Reliability and Failure of Electronic Materials and Devices, 2nd Edition

I

i-V behavior, 57–58

I/O contacts, 681–682

I/O pads, 455

I²L, See Integrated-injection logic

IC, See Integrated circuit

IDDq, 615–616

Ideal junction behavior deviations, 60

breakdown, 61

characteristics, 60–61

punch-throughs, 61

ILB, See Inner lead bonding

ILD, See Interlayer dielectrics

IMC, See Intermetallic compound

Impact ionization, 338

Impact-ionization avalanche, 357

Implantation, 160

Impurity diffusion coefficient, 116

Impurity-induced corrosion, 459

In-circuit failures, 29

In-line monitors, 695

In-service stress, 601

Incandescent lamps failure, 316–317

Indirect bandgap semiconductors, 48–49

Indium tin oxide (ITO), 15–16, 89–90

Indium-based solder layers, 582

Inert strength, 595–596

Inertial-confinement fusion applications, 583–584

Infant mortality, 32–33

Infrared ...