V
Vacancies, 114
buildup, 259
defects, 54
electromigration flux, 510
lifetimes, 281
subsaturation, 281–282
supersaturation, 281–282
transport, 300
Vacancy-interstitial pairs, 115, 423
Vacuum
chucks, 142–143
electronics, 2–3
load locks, 160–162
tube electrodes, 410
Valence
edge, 356
bonds, 44
electrons, 46–47
Valence-band electron excitation, 425
van der Waals (vdW), 153–154
adhesion, 153–154, 156–157
interactions, 157
Vapor-borne particulates, 149
VC techniques, See Voltage contrast techniques
vdW, See van der Waals
Very large scale integration (VLSI), 198
chips, 147
circuits, 73
plasma etching, 350–351
regime, 261
VHSIC, 198
Via-conductor geometry, 287
Via-hole contact resistance, 648–649
Vibrating mass,

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