Compact MOSFET Models for VLSI Design

Index

2-D-field, 215

abrupt junction, 40

affinity, electron, 30

alpha power, drain current model, 278

approximation,

charge sheet, 64, 171, 172

delta-depletion, 79, 171

first sub-band (FSA), 352

gradual channel, 165

quasistatic, 291

triangular well, 351

variational method, 351

WKB, 363, 365

Auger recombination, 23

ballistic transport, 261

band gap,

narrowing, 17

temperature dependence, 12

band-to-band tunneling, 374

benchmark test, compact models, 208

Bloch function, 7

boron penetration, 120

boundary condition, silicon–dielectric interface, 30

box profile, 131, 156, 157

Brilloin zone, 9

BSIM3v3, 234

noise, 328

INWE effect, 240

NWE effect, 240

bulk charge,

fixed, 2

total, 294

bulk transconductance, source referred, 302

capacitance,

bottom, 313

extrinsic, 312

flat band, 91

high frequency, 91

junction, 313

low frequency, 90

overlap, 315

sidewall, 44, 314

small signal, equivalent, 86

space charge, 349

capacitance model,

EKV, 311

Meyer's, 312

capacitor,

three terminal, 108

three terminal MOS, 108

capture cross-section, electron and holes, 22

carrier,

recombination and generation, 21

statistics, 14

Caughey–Thomas model, 25

channel,

length, 162

potential and field distribution, 193

Channel Length Modulation (CLM), 190, 304

BSIM, 265

HiSIM, 266

Channel Length Modulation (CLM)

pseudo-2-D model, 262

characteristic length, 226

charge,

fixed, 118

interface, 118

ionic, 118

oxide trapped, 118 ...