CONTENTS

About the Authors

Preface

Acknowledgements

Nomenclature

1    Warm Up

1.1   Bipolar Junction Transistors

1.1.1    Differential VBE

1.2   Metal-Oxide Semiconductor Field-Effect Transistor

1.2.1    Cutoff Region

1.2.2    Subthreshold Conduction

1.2.3    Triode Region

1.2.4    Saturation Region

1.2.5    Thermal Properties

1.2.6    Channel Length Modulation Effect

1.3   Diode

1.4   Resistor

1.4.1    Dummy Element

1.4.2    Guard Ring

1.4.3    Sheet Resistance

1.5   Device Matching

1.5.1    Application of Statistics to Circuit Design

1.5.2    Systematic Variation

1.6   Simulation Models for Circuit Design

1.6.1    Process Variation and Typical Design

1.6.2    Process Corners

1.7   Noise

1.7.1    Types of Noises

1.7.2    Sums and Multiplications of Noises

1.8   Fabrication Technology

1.9   Book Organization

1.10 Exercises

References

2    Voltage Reference

2.1   Performance Measures

2.1.1    Line Regulation

2.1.2    Temperature Coefficient

2.1.3    Power Supply Rejection Ratio

2.1.4    Quiescent Current

2.1.5    Output Noise

2.2   Other Design Considerations

2.3   Summary

2.4   Exercises

References

3    Bandgap Voltage Reference

3.1   Widlar Bandgap Voltage Reference Circuit

3.2   Drain Voltage Equalization Current Mirror

3.2.1    Opamp Based β-Multiplier Bandgap Voltage Reference Circuit

3.2.2    Bandgap Voltage Reference Circuit

3.3   Major Circuit Elements

3.3.1    Operational Amplifier

3.3.2    Current Mirror

3.3.3    Startup Circuit

3.3.4    Resistor Network

3.3.5    Bipolar ...

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