Index
113 defects
2D dopant distribution
A
amorphous layer
analytical transmission electron microscopy
annular dark field (ADF)
arsenic
atomic structure
B
bending
Bohr magneton
bubbles
burgers vector
C
chemical reaction
CMOS and BiCMOS transistors
CNT/Carbon Nanotube
contact etch stop layers (CESL)
contacting
convergent beam electron diffraction (CBED)
crystallization state
current injection
D
Dark Field Electron Holography (DFEH)
Dark-field electron holography (DFEH)
defects
device
dielectric constant
direct wafer bonding (DWB)
dislocations
Dopant profiling
Dopant segregation
dual-beam
E
electro-magnetic field
electron beam induced deposition (EBID)
electron diffractionm
electron energy loss spectroscopy (EELS)
electron holography (EH)
electron wave
electrostatic phase shift
elemental profile
energy dispersive X-ray spectroscopy (X-EDS)
energy filter
EOR defects
F
FIB/Focused Ion Beam
FinFET
finite element modeling
focused ion beam (FIB)
focused ion beam milling
fresnel contrast
G
g.b analysis
gas injection system (GIS)
gas platelets
gate oxide
Ge
geometric phase analysis (GPA)
grain boundary
H
habit plane
H-Bar lamella
heating
high annular dark field (HAADF)
high resolution transmission electron microscopy (HRTEM)
High-k
high-resolution transmission electron microscopy (HRTEM)
HoloDark
hydrogen implantation
I, K
inactive thickness
inside/outside contrast
interdiffusion
interfacial layerm
interferometry
ion beam induced defects
ion beam induced deposition (IBID)
ion beam milling ...
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