Transmission Electron Microscopy in Micro-nanoelectronics

Contents

Introduction

Chapter 1 Active Dopant Profiling in the TEM by Off-Axis Electron Holography

1.1. Introduction

1.2. The Basics: from electron waves to phase images

1.3. Experimental electron holography

1.4. Conclusion

1.5. Bibliography

Chapter 2 Dopant Distribution Quantitative Analysis Using STEM-EELS/EDX Spectroscopy Techniques

2.1. Introduction

2.2. STEM-EELS-EDX experimental challenges for quantitative dopant distribution analysis

2.3. Experimental conditions for STEM spectroscopy impurity detection

2.4. STEM EELS-EDX quantification of dopant distribution application examples

2.5. Discussion on the characteristics of STEM-EELS/EDX and data processing

2.6. Bibliography

Chapter 3 Quantitative Strain Measurement in Advanced Devices: A Comparison Between Convergent Beam Electron Diffraction and Nanobeam Diffraction

3.1. Introduction

3.2. Electron diffraction technique in TEM (CBED and NBD)

3.3. Experimental details

3.4. Results and discussion

3.5 Conclusion

3.6. Bibliography

Chapter 4 Dark-Field Electron Holography for Strain Mapping

4.1. Introduction

4.2. Setup for dark-field electron holography

4.3. Experimental requirements

4.4. Strained silicon transistors with recessed sources and drains stressors

4.5. Thin film effect

4.6. Silicon implanted with hydrogen

4.7. Strained silicon n-MOSFET

4.8. Understanding strain engineering

4.9. Strained silicon devices relying on stressor layers

4.10. 28-nm technology node MOSFETs

4.11. FinFET device

4.12. Conclusions

4.13 Bibliography ...