SiGe, GaAs, and InP Heterojunction Bipolar Transistors

Index

Absorption efficiency, 447

Accelerated life testing, 327

Acoustic scattering, 18, 21

Activation energy, 338

Adjacent channel leakage power (ACP), 401

Alloy barrier effect, 63

Alloy scattering, 21

Anderson and Crowell method, 295

Auger generation, 282

Auger recombination, 248, 298, 330

Avalanche breakdown, 282, 284–285, 306–307, 309

Avalanche effect, 297

Avalanche multiplication, 287, 288, 290, 293–294, 300, 308

Backward Euler method, 259

Ballistic motion, 296, 352

Bandgap narrowing, 11–13, 93, 162, 298, 350

Base ballasting resistor, 319, 320

Base conductivity modulation, 71

Base current reversal, 298

Base pushout, 71–72, 89–90, 119, 122, 297

Base transit time, 76, 80, 111–112, 120, 122, 124, 136, 144–147, 152, 161, 163, 166, 170, 214, 303, 435, 442, 446

Base width modulation effect, 2, 69, 71, 80, 109, 204, 218

Boltzmann statistics, 255

Boltzmann transport equation, 228, 232, 250

Bulk recombination, 54, 56, 103, 205

Burn-in, 338–339

Carrier freeze-out, 80

Charge-control model, 191, 297

Charge-control relation, 191

Charge partitioning method, 265

Chemical vapor deposition (CVD), 14, 32, 34, 45, 158, 361

Coinwell–Weisskopf approximation, 234

Collapse loci, 312

Collapse phenomenon, 306–307

Collector breadown voltage, 39, 123, 142, 149, 296, 300, 389

Collector efficiency, 2, 323, 396

Collector offset voltage, 67–69, 205–206

Collector signal delay, 114–115, 243

Collector space-charge-layer transit time, 112, 120, 123, 152, 170, 303, 387

Collector space-charge-region widening, ...