Index
For major topics within diode laser engineering (DLE), diode laser reliability (DLR), diode laser diagnostics (DLD) see under the following letters: DLE: B, C, D, E, F, G, H, L, M, O, Q, R, S, T, U, W DLR: A, C, D, E, F, L, O, R, S DLD: A, D, E, L, M, P, R, S, T
A
Absorption
coefficient
PECVD a-Si vs IB a-Si
energy
intravalence band
photon
rate
stimulated
Absorptive layers
Au
effective index
higher-order lateral mode suppression
Ti/Pt/Au
effective index
Accelerated reliability testing
models
Arrhenius
Eyring
inverse power law
others
relationships
exponential, Weibull, lognormal acceleration
test conditions
Acceleration factor
Accumulation layer
Activation energy
Active layer
degradation
impurity trapping
integrity
interface traps formation
orientation
quantum well (QW) vs quantum dot (QD)
tensile to compressive stress transition
thickness
thinning
thin-tapered-thickness
Adiabatic transformation
Amorphous hydrogenated silicon (a-SiH)
Amplified spontaneous emission (ASE)
Anti-guiding
Anti-reflective (AR) coating
Anti-resonant reflecting optical waveguide (ARROW) lasers
Aspheric lenses
Astigmatism
Athermal waveguide
Atomic force microscopy (AFM)
Auger
electron spectroscopy
recombination
analysis
losses
rate
Automatic current control (ACC)
Automatic power control (APC)
B
Back-end-of-line (BEOL) processing steps
Band
alignment
filling
offsets
Bandgap energy
blueshift
calculated temperature dependence
GaAs
InP
temperature dependence
Bandgap engineering
double-heterostructure DH ...
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