Recent trends in silicon carbide (SiC) and graphene-based gas sensors
M. Andersson, A. Lloyd Spetz and R. Pearce, Linköping University Sweden*
Abstract:
The introduction of silicon carbide (SiC) as the semiconductor in gas sensitive field effect devices has tremendously improved this sensor platform extending the temperature range and number of detectable gases. Here we review the recent trends in research, starting with transducer mechanisms, and the latest findings regarding the detection mechanism, and present new material combinations as sensing layers and describe smart operation of the field effect sensors enabling one sensor to act as a sensor array. The introduction of epitaxially-grown graphene on SiC as a gas sensing layer ...
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