Semiconductor Devices: Physics and Technology, 3rd Edition

11

Crystal Growth and Epitaxy

11.1 SILICON CRYSTAL GROWTH FROM THE MELT

11.2 SILICON FLOAT-ZONE PROCESS

11.3 GaAs CRYSTAL-GROWTH TECHNIQUES

11.4 MATERIAL CHARACTERIZATION

11.5 EPITAXIAL-GROWTH TECHNIQUES

11.6 STRUCTURES AND DEFECTS IN EPITAXIAL LAYERS

SUMMARY

As discussed in Chapter 1, the two most important semiconductors for discrete devices and integrated circuits are silicon and gallium arsenide. In this chapter we describe the common techniques for growing single crystals of these two semiconductors. The starting materials, silicon dioxide for a silicon wafer and gallium and arsenic for a gallium arsenide wafer, are chemically processed to form a high-purity polycrystalline semiconductor ...