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RF Circuit Design, 2nd Edition by Christopher Bowick

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CHAPTER 7 RF (Large Signal) Power Amplifiers

In Chapters 5 and 6, we studied the transistor as a small-signal device. Y and S parameters were introduced as a means of facilitating amplifier design, and design equations were provided. When the transistor is used as a large-signal device, however, these equations are no longer valid. In fact, both Y and S parameters are called small-signal parameters, and should not be considered in the design of RF power amplifiers. After looking at basic power transistor characteristics in detail, we’ll cover the leading semiconductor materials used in today’s RF power ICs.

RF POWER TRANSISTOR CHARACTERISTICS

Instead of specifying the Y and S parameters for a power transistor, manufacturers will typically ...

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