CHAPTER ELEVEN

RF Mixers

11.1 NONLINEAR DEVICE CHARACTERISTICS

A typical mixer is a three-port circuit that accepts two signals at two different frequencies and produces at the third port a signal that is the sum or difference of the two input frequencies. Production of a new frequency or frequencies requires a nonlinear resistance device. The two most common semiconductor nonlinear characteristics are of the form eqV(t)/kT as found in pn junction diodes or bipolar junction transistors and of the form IDSS[1 − V (t)/Vt]2 as found in field-effect transistors. Schottky barrier diodes are not described here since they are mostly used out of necessity for low-noise high-microwave-frequency applications.

When a pn junction is excited by two signals (plus a dc term):

(11.1) c11e001

The device current is of the form

(11.2) c11e002

where the thermal voltage, VT, is defined as kT/q, k is Boltzmann’s constant, T is the absolute temperature, and q is the magnitude of the electronic charge. It is known, however, that this can be simplified by expressing it in terms of modified Bessel functions because

(11.3) c11e003

where In(z) is the modified Bessel function of order n and argument z [1]. The Bessel function has the ...

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