Chapter Six. Epi Wafers - Preparation and Properties
The epitaxial deposition of Si, often referred to as epi, is an essential step in the formation of many MEMS structures. Epi is used as etch stops for forming BESOI (bonded etch-back silicon on insulator) structures, on SIMOX SOI structures to increase the Si thickness above the buried oxide (BOX) and as a means for building a combination monocrystalline/polycrystalline structure referred to as epi-poly. Epi layers of up to 100 μm, or even more, are used in MEMS structures, although most applications require only 2–20 μm of epi.
This brief treatise on epitaxy touches on the fundamentals of epitaxial deposition as well as some specific examples relevant to MEMS. A comprehensive discussion of ...
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