GAAs High-Speed Devices: Physics, Technology, and Circuit Applications

CONTENTS

PREFACE

1 The Development of Gallium Arsenide Devices and Integrated Circuits

1.1 Gallium Arsenide Device Development,

1.2 GaAs Foundry,

1.2.1 Private/Commercial Requirements,

1.2.2 Analog/Digital Designs,

1.2.3 Discrete Device/IC Production,

1.2.4 Process Capability,

1.2.5 Commercial Business,

1.2.6 Unique Characteristics,

2 Gallium Arsenide Crystal Structure and Growth

2.1 Introduction,

2.2 Crystal Structure,

2.3 Electron Energy-Band Structure,

2.3.1 Energy-Band Calculations and Experimental Results,

2.3.2 Direct and Indirect Intrinsic Gaps,

2.3.3 Characterization of Zone–center-Band Extrema,

2.3.4 Electron Effective Masses: Conduction-band System Statistical Weight,

2.3.5 Hole Effective Masses,

2.4 Electron and Hole Transport,

2.4.1 Hole Mobility,

2.4.2 Electron Velocity and Mobility,

2.4.3 Electrical Conductivity,

2.5 Crystal Growth of Semi-Insulating GaAs from Melt,

2.5.1 Horizontal Bridgman Growth,

2.5.2 Horizontal Gradient Freeze,

2.5.3 Czochralski Crystal Growth,

2.5.4 Defect Densities in SI LEC GaAs,

2.6 EL2 Centers in GaAs,

2.6.1 Electrical Characteristics of EL2,

2.6.2 Experimental Properties,

2.6.3 Theoretical Models,

3 Epitaxial Growth Processes

3.1 Introduction to Epitaxial Growth Processes,

3.2 Molecular Beam Epitaxy,

3.2.1 MBE Growth Systems and Deposition Sources,

3.2.2 In situ Analysis,

3.2.3 Growth of III–V Compounds,

3.3 Metal–Organic Chemical Vapor Deposition,

3.3.1 Metal–Organic Sources,

3.3.2 Nonhydride Group-V Sources for MOCVD,

3.3.3 Basic Reactions ...