Future Trends in Microelectronics

Index

1. absorption
2. adaptation
3. AlGaAs
4. AlGaN
5. algorithm
6. aluminum (Al)
7. amplifier
8. anticrossing
9. arsenic (As)
10. associative computing
11. asymmetric doping
12. atomic force microscopy (AFM)
13. atomic layer deposition (ALD)
14.  
15. ballistic transport
16. bandgap engineering
17. band structure
18. bandwidth
19. BiCMOS
20. bit error rate (BER)
21. brachytherapy
22. brain
23. brain-machine interface
24. brain-spinal interface
25. breakdown voltage
26. buffer layer
27.  
28. capacitance
29. carbon (C),,–
30. catheter
31. cell library
32. cellular automata
33. channel potential
34. channeling
35. chemical-mechanical polishing (CMP)
36. chemical vapor deposition (CVD)
    1. metal-organic (MOCVD)
    2. plasma-enhanced (PECVD)
37. chemotherapy
38. chip size
39. clock distribution
40. clock frequency
41. clocking
42. clock synchronization
43. CMOS
    1. post-processing
    2. scaling
44. comparators
45. computed tomography (CT)
46. computer
47. conduction band
48. conductivity
49. contact resistance
50. copper (Cu)
51. Coulomb blockade
52. critical dimension (CD)
53. crosstalk
54. current drive
55. current gain
56.  
57. data center
58. DC/DC converters
59. depletion
60. diamond
61. dielectric
    1. high-\kappa
    2. low-\kappa
62. digital video disk (DVD)
63. diode laser. see laser
64. dislocations
65. distance norm
66. domain
67. double heterostructure
68. drain current
69. drain-induced barrier lowering (DIBL)
70. Dyakonov surface wave
71. dynamic RAM (DRAM).see memory
72.  
73. effective mass
74. efficiency
75. electric field
76. electroluminescence
77. electron-electron interaction
78. electron-hole bilayer (EHB)
79. electron spin
80. energy conversion
81. energy harvesting
82. epitaxy
    1. metal-organic vapor phase (MOVPE)
    2. molecular beam epitaxy (MBE)
83. error correction
84. evolution
85.  
86. fabrication technologies ...