Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

Index

1. (110)
2. (100)
3.  
4. A face
5. ab-initio calculation
6. above-gap excitation
7. absorption
   1. coefficient
   2. depth
   3. edge
8. AC motor (or motor drive)
9. accelerometer
10. acceptor-like state
11. accumulation-layer FET (ACCUFET)
12. Acheson process
13. activation (of dopants)
14. airbridge
15. Al/Ti contact
16. alphabet line
17. ambipolar
    1. diffusion coefficient (D_A)
    2. diffusion equation (ADE)
    3. diffusion length (L_A)
    4. lifetime (τ_A)
18. amorphization
19. Ampere's law
20. amphoteric impurity
21. anisotropy
    1. of breakdown electric field
    2. of mobility
22. annealing
    1. hydrogen
    2. in-situ
    3. metallization
    4. nitridation
    5. POCl₃
    6. post-implantation
    7. post-metallization
    8. post-oxidation (POA)
    9. rapid thermal (RTA)
    10. re-oxidation
23. anode shorts (in a thyristor)
24. anodic oxidation
25. anti-phase domain
26. anti-site defect
27. armature flux (of a motor)
28. asymmetrical IGBT
29. asynchronous (induction) motor (or motor drive)
30. atomic force microscopy (AFM)
31. Auger recombination
32. avalanche breakdown
33. avalanche multiplication
34. avalanche photodiode
35. avalanche region
    1. in an avalanche photodiode (APD)
    2. in an IMPATT diode
36.  
37. back-emf (in a motor)
38. Baliga's figure-of-merit
39. band (also energy band)
    1. conduction band minima
    2. diagram
    3. offset
    4. structure
    5. surface band bending
40. bandgap
    1. energy
    2. narrowing
    3. temperature dependence of
41. barrier height
    1. for injection into SiO₂
    2. inhomogeneity
    3. metal-semiconductor (Schottky)
    4. lowering of (Schottky ...