Emerging Nanoelectronic Devices

List of Contributors

Ethan C. Ahn, Department of Electrical Engineering, Stanford University, USA

Masakazu Aono, WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, Japan

Tetsuya Asai, Graduate School of Information Science and Technology, Hokkaido University, Japan

Behtash Behin-Aein, GLOBALFOUNDRIES Inc., USA

Benjamin F. Bory, Eindhoven University of Technology, The Netherlands

George Bourianoff, Components Research Group, Intel Corporation, USA

Geoffrey W. Burr, IBM, USA

An Chen, GLOBALFOUNDRIES Inc., USA

Donald M. Chiarulli, Department of Electrical and Computer Engineering, University of Pittsburgh, USA

György Csaba, University of Notre Dame, USA

Shamik Das, Nanosystems Group, The MITRE Corporation, USA

Denver H. Dash, Intel Science and Technology Center, USA

Supriyo Datta, Purdue University, USA

Vinh Quang Diep, Purdue University, USA

S. Burc Eryilmaz, Department of Electrical Engineering, Stanford University, USA

Yan Fang, Department of Electrical and Computer Engineering, University of Pittsburgh, USA

Scott Fong, Department of Electrical Engineering, Stanford University, USA

Aaron D. Franklin, Department of Electrical and Computer Engineering and Department of Chemistry, Duke University, USA

Paul Franzon, North Carolina State University, USA

Tsuyoshi Hasegawa, WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, Japan

Toshiro Hiramoto, Institute of Industrial Science, The University of Tokyo, Japan ...