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Compact MOSFET Models for VLSI Design

Book Description

Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models.

  • Adopts a unified approach to guide students through the confusing array of MOSFET models

  • Links MOS physics to device models to prepare practitioners for real-world design activities

  • Helps fabless designers bridge the gap with off-site foundries

  • Features rich coverage of:

    • quantum mechanical related phenomena

    • Si-Ge strained-Silicon substrate

    • non-classical structures such as Double Gate MOSFETs

  • Presents topics that will prepare readers for long-term developments in the field

  • Includes solutions in every chapter

  • Can be tailored for use among students and professionals of many levels

  • Comes with MATLAB code downloads for independent practice and advanced study

This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner's reference.

Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya

Table of Contents

  1. Cover Page
  2. Title Page
  3. Copyright
  4. Dedication
  5. Contents
  6. Preface
  7. Acknowledgements
  8. List of Symbols
  9. Chapter 1: Semiconductor Physics Review for MOSFET Modeling
    1. 1.1 Introduction
    2. 1.2 Crystal Planes
    3. 1.3 Band Theory of Semiconductors
    4. 1.4 Carrier Statistics
    5. 1.5 Carrier Generation and Recombination
    6. 1.6 Carrier Scattering
    7. 1.7 Contacts and Interfaces
    8. 1.8 Strained Silicon
    9. 1.9 Basic Semiconductor Equations
    10. 1.10 Compact MOSFET Models
    11. 1.11 The p – n Junction Diode
    12. 1.12 Tunneling Through Potential Barrier
    13. References
    14. Problems
  10. Chapter 2: Ideal Metal Oxide Semiconductor Capacitor
    1. 2.1 Physical Structure and Energy Band Diagram
    2. 2.2 Modes of Operation of MOS Capacitors
    3. 2.3 Electric Field and Potential Distributions
    4. 2.4 Potential Balance
    5. 2.5 Inversion Layer Thickness
    6. 2.6 Threshold Voltage
    7. 2.7 Small Signal Capacitance
    8. 2.8 Three Terminal Ideal MOS Structures
    9. References
    10. Problems
  11. Chapter 3: Non-ideal and Non-classical MOS Capacitors
    1. 3.1 Introduction
    2. 3.2 Flat-Band Voltage
    3. 3.3 Inhomogeneous Substrate
    4. 3.4 Polysilicon Depletion Effect
    5. 3.5 Non-classical MOS Structures
    6. 3.6 MOS Capacitor with Stacked Gate
    7. References
    8. Problems
  12. Chapter 4: Long Channel MOS Transistor
    1. 4.1 Introduction
    2. 4.2 Layout and Cross-Section of Physical Structure
    3. 4.3 Static Drain Current Model
    4. 4.4 Threshold Voltage (VT) Based Model
    5. 4.5 Memelink–Wallinga Graphical Model
    6. 4.6 Channel Length Modulation
    7. 4.7 Channel Potential and Field Distribution Along Channel
    8. 4.8 Carrier Transit Time
    9. 4.9 EKV Drain Current Model
    10. 4.10 ACM and BSIM5 Models
    11. 4.11 PSP Model
    12. 4.12 HiSIM (Hiroshima University STARC IGFET Model) Model
    13. 4.13 Benchmark Tests for Compact DC Models
    14. References
    15. Problems
  13. Chapter 5: The Scaled MOS Transistor
    1. 5.1 Introduction
    2. 5.2 Classical Scaling Laws
    3. 5.3 Lateral Field Gradient
    4. 5.4 Narrow and Inverse Width Effects
    5. 5.5 Reverse Short Channel Effect
    6. 5.6 Carrier Mobility Reduction
    7. 5.7 Velocity Overshoot
    8. 5.8 Channel Length Modulation: A Pseudo-2-D Analysis
    9. 5.9 Series Resistance Effect on Drain Current
    10. 5.10 Polydepletion Effect on Drain Current
    11. 5.11 Impact Ionization in High Field Region
    12. 5.12 Channel Punch-Through
    13. 5.13 Empirical Alpha Power MOSFET Model
    14. References
    15. Problems
  14. Chapter 6: Quasistatic, Non-quasistatic, and Noise Models
    1. 6.1 Introduction
    2. 6.2 Quasistatic Approximation
    3. 6.3 Terminal Charge Evaluation
    4. 6.4 Quasistatic Intrinsic Small Signal Model
    5. 6.5 Extrinsic Capacitances
    6. 6.6 Non-quasistatic (NQS) Models
    7. 6.7 Noise Models
    8. References
    9. Problems
  15. Chapter 7: Quantum Phenomena in MOS Transistors
    1. 7.1 Introduction
    2. 7.2 Carrier Energy Quantization in MOS Capacitor
    3. 7.3 2-D Density of States
    4. 7.4 Electron Concentration Distribution
    5. 7.5 Approximate Methods
    6. 7.6 Quantization Correction in Compact MOSFET Models
    7. 7.7 Quantum Tunneling
    8. 7.8 Gate Current Density
    9. 7.9 Compact Gate Current Models
    10. 7.10 Gate Induced Drain Leakage (GIDL)
    11. References
    12. Problems
  16. Chapter 8: Non-classical MOSFET Structures
    1. 8.1 Introduction
    2. 8.2 Non-classical MOSFET Structures
    3. 8.3 Double Gate MOSFET Models
    4. References
  17. Appendix A: Expression for Electric Field and Potential Variation in the Semiconductor Space Charge under the Gate
  18. Appendix B: Features of Select Compact MOSFET Models
    1. Reference
  19. Appendix C: PSP Two-point Collocation Method
    1. References
  20. Index