Circuit Simulation

GLOSSARY

ABM: Adams-Bashforth-Moulton

AC: alternating current

AMD: average minimum degree

BBD: bordered block diagonal

BDF: backward differentiation formula

BDF2: second order BDF

BE: backward Euler

BJT: bipolar junction transistor

BS: backward substitution

BTF: block-triangular form

CCCS: current-controlled current source

CCS: controlled current source

CCVS: current-controlled voltage source

COLAMD: column average minimum degree

COLMMD: column multiple minimum degree

CVS: controlled voltage source

DAE: differential-algebraic equation

DC: direct current

DCCS: dynamic controlled current source

DCVS: dynamic controlled voltage source

DRAM: dynamic random access memory

ERO: elementary row operation

FE: forward elimination

FE: forward Euler

FET: field-effect transistor

FS: forward substitution

GE: Gaussian elimination

GEPP: GE with partial pivoting

GE/LU: shorthand, refers to both LU factorization and GE when implemented as in Gauss's method for LU factorization.

GJ: Gauss-Jacobi

GS: Gauss-Seidel

GTE: global truncation error

IEEE: institute of electrical and electronics engineers

IVP: initial value problem

KCL: Kirchoff's current law

KLU: “Clark Kent” LU factorization

KVL: Kirchoff's voltage law

LMS: linear multistep

LTE: local truncation error

MD: minimum degree

MMD: multiple minimum degree

MNA: modified nodal analysis

MOSFET: metal-oxide-semiconductor field-effect transistor

MTE: ...