B.3. BJT Base, Emitter, and Collector Currents in the Active Mode
The discussion of the transistor mechanism of Unit B.1 is extended here to include base-current mechanisms, which exist in the real transistor, and the effect of base-width modulation as discussed in Unit B.2. Initially, the case of active-mode operation is discussed, and this is followed by the general-bias case, which includes the possibility of both pn junctions becoming forward biased.
In the device model for the bipolar junction transistor, the parameter βDC is
Equation B.6
where IB is the composite of all contributions to the base current. (The use of “dc” is consistent ...
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