4.3. Transconductance Parameter

The transconductance parameter, gm, was introduced in Unit 2 in the treatment on the rudimentary electronic amplifier; it is the proportionality constant of the linear relationship between the output (responding) current and the input (control) voltage [(2.3)]. For the MOSFET, NMOS, or PMOS, Id = gmVgs, where Id is into the drain for both transistor types. An ideal transistor can be modeled with this alone. A simple model, which includes no other components, would often be adequate for making estimates of circuit performance.

To obtain an expression for gm as a function of the general form iD = f(vGS, vDS, vSB) [e.g., (3.8)], we use the definition [from (4.1)]

Equation 4.2

Using (3.8) to express iD, the resulting ...

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