3.1. Physical Description of the MOSFET
A diagrammatic NMOS is shown in Fig. 3.1. The device consists of a three-layer structure of metal–oxide–semiconductor (MOS). A two-terminal MOS structure (connections to metal and semiconductor) is essentially a parallel-plate capacitor. In the same manner as for a normal capacitor, when a positive gate voltage, VG, is applied with respect to the p-type body (for NMOS) [i.e., with respect to the metal contact on the underside of the p-type semiconductor body (or substrate)], negative charges are induced under the oxide layer in the semiconductor. When VG (with respect to the semiconductor body) exceeds the threshold voltage, Vtno, a channel of free-carrier electrons forms under the oxide; that is, the ...
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