Unit 3. Characterization of MOS Transistors for Circuit Simulation
In this unit, the basic (Level 1 SPICE) dc MOSFET characteristic equations are introduced. The amplifier exercises and projects use the results for design and analysis. Circuit solutions are compared with measured results from the circuit to make an assessment of the degree to which the transistor models for the MOSFET represent actual device behavior. The parameters for this unit are presented in Table 3.1. Note that in the case of KP, we can only measure K and would be able to extract KP only if gate width W and length L were known.
| TABLE 3.1 | ||
|---|---|---|
| SPICE Name | Math symbol | Description |
| VTO | Vtno, Vtpo | Zero-bias threshold voltage. |
| KP | Transconductance parameter. | |
| Gamma | γn, γp | Body-effect parameter. ... |
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